Mark A. Reed

Harold Hodgkinson Chair of Engineering and Applied Science, Yale University

www.eng.yale.edu/reedlab

 

Mark Reed is the Harold Hodgkinson Chair of Engineering and Applied Science at Yale University, which he joined after co-founding the first U.S. Nanoelectronics research program at Texas Instruments. His research activities have included the investigation of nanoscale and mesoscopic systems, electronic transport in heterojunction systems, artificially structured materials and devices, MEMS and bioMEMS, nanotechnology, and molecular electronics.  Mark is the author of more than 150 professional publications, 5 books, has given ten plenary and over 200 invited talks, and holds 21 U.S. and foreign patents.  He has been elected to the Connecticut Academy of Science and Engineering and Who's Who in the World.  His awards include; Fortune Magazine “Most Promising Young Scientist” (1990), the Kilby Young Innovator Award (1994), the DARPA ULTRA Most Significant Acheivement Award (1997), the Harold Hodgkinson Chair of Engineering and Applied Science at Yale University (1999), the Syracuse University Distinguished Alumni award (2000), the Forbes magazine “E-Gang” (2001), the Fujitsu ISCS Quantum Device Award (2001), the Yale Science and Engineering Association Award for Advancement of Basic and Applied Science (2002), and in 2003 was elected a Fellow of the American Physical Society.

 

Intrinsic Electron Conduction Mechanisms in Molecules

 

Mark A. Reed

Departments of Electrical Engineering and Applied Physics

Yale University

 

Electron devices containing molecules as the active region have been an active area of research over the last few years.  This talk presents measurements in a variety of molecular systems to elucidate the transport mechanisms, specifically in self-assembled monolayers (SAMs) using nanometer scale devices. Detailed kinetic studies are necessary to distinguish between different conduction mechanisms; for example, in alkanes temperature-independent electron transport is observed, proving tunneling as the dominant conduction mechanism when defects are eliminated from the device structure.  This is distinct from Langmuir-Blodgett films, where only defect or filamentary conduction has been observed. From the bias-dependence of b, a barrier height FB of 1.39 ± 0.01 eV and a zero field decay coefficient b0 of 0.79 ± 0.01 Å-1 are determined for alkanethiols. Inelastic electron tunneling spectroscopy of the molecules in the junction exhibits well-defined modes of the molecules in the junction, and yield a measurement of the intrinsic linewidths of these modes.  Deviation from this classic behavior for more complex molecule structures, and a comparison of the differences and pitfalls of various fabrication and characterization approaches, will be discussed.

Mark A. Reed

Harold Hodgkinson Professor of Engineering and Applied Science
Professor of Electrical Engineering and Applied Physics

Yale University

MAILING ADDRESS

P. O. Box 208284, New Haven, CT 06520-8284

tel: (203) 432-4306, fax: (203)432-6420, email: mark.reed@yale.edu. url: www.eng.yale.edu/reedlab

 

PERSONAL DATA

Born 4 Jan 1955, U.S. citizen

 

EDUCATION

Syracuse University, Physics, B. S. Honors, 5/77

Syracuse University, Physics, M. S., 5/79

Syracuse University, Solid State Physics, Ph.D., 12/83.

Undergraduate advisor:                                                       Henry Levinstein

Graduate advisor:                                                                 Arnold Honig

 

EMPLOYMENT

Professor of Electrical Engineering and Applied Physics, Yale Univ, 7/90 – present

Chairman of Electrical Engineering, Yale University, 7/95 – 6/01

Central Research Laboratories, Texas Instruments, 9/83 - 6/90

 

HONORS, AWARDS, PROFESSIONAL SERVICE:

 

Honors:

Fellow, American Physical Society (2003), YSEA Award for Advancement of Basic and Applied Science (2002), Fujitsu ISCS Quantum Device Award (2001), Syracuse University Distinguished Alumni Award (2000),  Harold Hodgkinson Professor of Engineering and Applied Science, Yale U. (1999), DARPA ULTRA Most Significant Technical Achievement Award (1997),  Connecticut Academy of Science and Engineering (1996-present),  Who's Who in the World (2000-present); in America (2000-present); in American Science and Engineering (1995-present),  1994 Kilby Young Innovator Award.  Senior Member IEEE.  Fortune Magazine's 12 most promising young scientists (1990).  Senior Member of the Technical Staff, TI (1988).

 

Professional Activities:

Chair, 27th International Symposium on Compound Semiconductors (ISCS), 2001; Symposium Organizer, 1999 MRS (Molecular Electronics); Program Chair, 24th International Symposium on Compound Semiconductors (ISCS), 1997; Divisional Associate Editor, Physical Review Letters (1996-99).  Associate editor, Superlattices and Microstructures.  Editorial board, Nanotechnology; Supermolecular Science and Technology.  Publications Chair, NANOMES 1996.  Chairman, Silicon Nanoelectronics Workshop (1996).  Chairman, Ordered Molecular and Nanoscale Electronics, 1994.  Chairman, Workshop on Nanotechnology, Santa Fe, May 1992; and Workshop on Nanorobotics, October 1992.  Organizer, AAAS Symposium on Nanotechnology, Boston, February 1993.  Co-chairman, International Conference on Nanostructure Physics and Fabrication (College Station, Texas, March 1989), and Nanostructures and Mesoscopic Systems (Santa Fe, May 1991).  Secretary, 21st ISCS, September 1994.  Program committees: Silicon Nanoelectronics Workshop (1997); Cornell Conference on High Speed Devices 1997, 1993; Advanced Heterostructure Transistors (1998, 1996, 1994); AVS and NANO III (1995); 7th International Conference on Superlattices, Microstructures, and Microdevices (1994); Conference on Surfaces and Interfaces in Mesoscopic Devices (1994); 15th & 18th International Symposium on GaAs and Related Compounds; Electronic Properties of Two-Dimensional Electron Systems-10 (1993); Device Research Conference 1992; OSA (March 1989); AVS Joint Symposium (June 1989, Chair 1990).  Numerous NSF, DARPA, ONR, and government workshops.  4 books. Over 140 publications in books and journals such as Physical Review Letters,  Physical  Review, Applied Physics Letters, and Science.  Nine plenary and over 190 invited talks.  20 patents. Professional Memberships: APS (Fellow), IEEE (Senior Member), SX.

 

TOTAL PUBLICATIONS AND PATENTS: >140 papers, 4 books, 14 book chapters, 20  patents.

TEN SELECTED PUBLICATIONS:

1         M. A. Reed, J. N. Randall, R. J. Aggarwal, R. J. Matyi, T. M. Moore, and A. E. Wetsel, “Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure”, Phys. Rev. Lett. 60, 535 (1988).

2         M.R. Deshpande, J.W. Sleight, M.A. Reed, R.G. Wheeler, and R.J. Matyi,“Spin splitting of single 0D impurity states in semiconductor heterostructure quantum wells”, Phys. Rev. Lett. 76, 1328 (1996).

3         M.A. Reed, C. Zhou, C.J. Muller, T.P. Burgin, and J.M. Tour, “Conductance of a molecular junction”, Science 278, 252 (1997).

4         M. A. Reed, “Molecular Scale Electronics”, Proceedings of the IEEE: Special Issue on Nanoelectronics  87, 652 (1999).

5         M. A. Reed, D.W. Bennett, J. Chen, D.S. Grubisha, L. Jones II, A.M. Rawlett, J.M. Tour, and C. Zhou, “Prospects for Molecular-Scale Devices”, IEDM Tech. Digest p. 227, 1999.

6         M. A. Reed, J. W. Sleight,and M. R. Deshpande, “Electronic Transport Properties of Quantum Dots”, Handbook of Nanostructured Materials and Nanotechnology, ed. H. S. Nalwa (Academic Press 1999).

7         J. Chen, M. A. Reed, A. M. Rawlett, and J. M. Tour, “Observation of a Large On-Off Ratio and Negative Differential Resistance in an Electronic Molecular Switch”, Science, 286, 1550 (1999).

8         M. A. Reed and J. M. Tour, “Computing with Molecules”, Scientific American 282, 86, 2000.

9         J. Chen, W. Wang, M. A. Reed, M. Rawlett, D. W. Price, and J. M. Tour, “Room-Temperature Negative Differential Resistance in Nanoscale Molecular Junctions”, Appl. Phys. Lett., 77, 1224 (2000).

10      M. A. Reed, J. Chen, A. M. Rawlett, D. W. Price, and J. M. Tour, “Molecular Random Access Memory Cell”, Appl. Phys. Lett. . 78,  3735 (2001).

 

TOTAL STUDENTS/POSTDOCS SUPERVISED: PhD=8, Post-doc=6

Ph.D. thesis advisor: Jeffery Sleight (IBM), Rachel Lombardi (McKinsey), John Huber (Motorola), Mandar Despande (Motorola), Chong-Wu Zhou (USC), Gabel Chong (Intel), Jia Chen (IBM), Laurie Calvet (MIT).

Postdoc advisor: Chris Muller (Phillips, Netherlands), Mark Amman (Lawrence Berkeley Labs), James Klemic (Yale – current), Takhee Lee (Yale – current), Menno deJong (Yale -current), Ilona Kretzschmar (Yale - current)